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Ordering number : ENA1510A
ECH8668
Power MOSFET
20V, 7.5A, 17m Ω , –20V, –5A, 38m Ω , Complementary Dual ECH8
Features
http://onsemi.com
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The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
1.8V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
N-channel
20
±10
7.5
40
1.3
1.5
P-channel
--20
±10
--5
--40
Unit
V
V
A
A
W
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8668-TL-H
Packing Type : TL
Marking
0.15
8
5
TP
0 to 0.02
TL
Lot No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Bottom View
ECH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
80112 TKIM/O2809PE TKIM TC-00002167 No. A1510-1/8
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